N-Channel Power MOSFET, 40V Vds, 32A continuous drain current, and 1.4mΩ on-state resistance. This silicon, metal-oxide semiconductor FET features a 1.1mΩ drain-to-source resistance and 4.3nF input capacitance. Designed for surface mounting in a TDSON-8FL (SUPERSO8) package, it operates from -55°C to 150°C with 96W power dissipation. Halogen-free and RoHS compliant, with tin contact plating.
MountingSurface Mount
Power96W
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Technical Specifications
Infineon BSC014N04LSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 4.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 1.4mR |
| Package Quantity | 5000 |
| Power Dissipation | 96W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC014N04LSATMA1 Datasheet
Download the complete datasheet for Infineon BSC014N04LSATMA1 to view detailed technical specifications.
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