N-Channel Power MOSFET, 40V Vds, 32A continuous drain current, and 1.4mΩ on-state resistance. This silicon, metal-oxide semiconductor FET features a 1.1mΩ drain-to-source resistance and 4.3nF input capacitance. Designed for surface mounting in a TDSON-8FL (SUPERSO8) package, it operates from -55°C to 150°C with 96W power dissipation. Halogen-free and RoHS compliant, with tin contact plating.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSC014N04LSATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSC014N04LSATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 4.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 1.4mR |
| Package Quantity | 5000 |
| Power Dissipation | 96W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC014N04LSATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
