N-channel MOSFET, 40V drain-source voltage, 100A continuous drain current, and 1.45mΩ Rds(on) max. Features 4nF input capacitance, 96W max power dissipation, and operates from -55°C to 150°C. Surface mountable in TDSON-8FL packaging, this RoHS compliant silicon component is ideal for power applications.
MountingSurface Mount
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Technical Specifications
Infineon BSC014N04LSIATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Input Capacitance | 4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 1.45mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC014N04LSIATMA1 Datasheet
Download the complete datasheet for Infineon BSC014N04LSIATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.