N-Channel Power MOSFET, 60V Drain-to-Source Voltage (Vdss) and 100A Continuous Drain Current (ID). Features 0.00145 ohm On-Resistance and a maximum Gate-to-Source Voltage (Vgs) of 20V. This silicon Metal-oxide Semiconductor FET is designed for surface mounting with Tin contact plating. It operates within a temperature range of -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSC014N06NSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC014N06NSATMA1 Datasheet
Download the complete datasheet for Infineon BSC014N06NSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.