N-channel power MOSFET featuring 25V drain-source breakdown voltage and 1.4mΩ maximum on-state resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 100A and a maximum power dissipation of 74W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 5ns turn-on delay and a 3.6ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power74W
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Technical Specifications
Infineon BSC014NE2LSIATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.4mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| On-State Resistance | 1.4mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Rds On Max | 1.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC014NE2LSIATMA1 Datasheet
Download the complete datasheet for Infineon BSC014NE2LSIATMA1 to view detailed technical specifications.
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