N-Channel Power MOSFET featuring 60V drain-source voltage and 1.6mΩ Rds On. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 100A and a maximum power dissipation of 139W. Designed for surface mounting with tin contact plating, it operates within a temperature range of -55°C to 150°C and is RoHS and REACH SVHC compliant. Key switching characteristics include a 32ns turn-on delay and a 16ns fall time.
MountingSurface Mount
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Technical Specifications
Infineon BSC016N06NSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.2nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 1.6mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 32ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC016N06NSATMA1 Datasheet
Download the complete datasheet for Infineon BSC016N06NSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.