N-channel Power MOSFET featuring 40V drain-source voltage and 100A continuous drain current. Offers low on-state resistance of 1.8mR (max) and 1.5mR (drain to source). Designed for surface mounting with a TDSON-8 plastic package, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 125W. Contact plating is tin, matte, and the component is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSC018N04LSGATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 1.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 12nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| On-State Resistance | 1.8mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC018N04LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC018N04LSGATMA1 to view detailed technical specifications.
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