N-Channel Power MOSFET, 25V Vdss, 29A continuous drain current. Features low on-state resistance of 1.8mΩ (Rds On Max) and 1.5mΩ drain to source resistance. Operates with a gate-to-source voltage of 20V and offers a maximum power dissipation of 69W. Packaged in a TDSON-8 with tin plating, this silicon Metal-oxide Semiconductor FET is RoHS compliant and halogen-free.
Package100
Power69W
Quick Jump:
Technical Specifications
Infineon BSC018NE2LSATMA1 technical specifications.
General
| Package/Case | 100 |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Resistance | 1.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Number of Elements | 1 |
| On-State Resistance | 1.8mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 69W |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 5.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC018NE2LSATMA1 Datasheet
Download the complete datasheet for Infineon BSC018NE2LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.