The BSC018NE2LSIATMA1 is a single N-channel MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 29A and a drain to source resistance of 1.5mR. The device is packaged in a SMALL OUTLINE, R-PDSO-F5 package and is RoHS compliant. It has a maximum power dissipation of 62.5W and an on-state resistance of 1.8mR.
Package100
Power2.5W
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Technical Specifications
Infineon BSC018NE2LSIATMA1 technical specifications.
General
| Package/Case | 100 |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Resistance | 1.5mR |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 920pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Number of Elements | 1 |
| On-State Resistance | 1.8mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 165mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC018NE2LSIATMA1 Datasheet
Download the complete datasheet for Infineon BSC018NE2LSIATMA1 to view detailed technical specifications.
No datasheet is available for this part.