N-channel MOSFET, 40V Drain-to-Source Voltage (Vdss), 100A Continuous Drain Current (ID). Features low On-State Resistance (Rds On) of 1.5mR, 1.9mR. Operates from -55°C to 150°C with a maximum power dissipation of 78W. Surface mountable in an 8-pin TDSON package, supplied on tape and reel. RoHS compliant and Halogen Free.
MountingSurface Mount
Power78W
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Technical Specifications
Infineon BSC019N04LSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 1.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| On-State Resistance | 1.9mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 78W |
| Rds On Max | 1.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC019N04LSATMA1 Datasheet
Download the complete datasheet for Infineon BSC019N04LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.