N-Channel Power MOSFET, 40V Vds, 29A Continuous Drain Current, and 1.9mΩ On-State Resistance. This silicon, metal-oxide semiconductor FET features a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. Designed for surface mounting, it is packaged in a TDSON-8 plastic package with tin, matte contact plating and is RoHS compliant.
MountingSurface Mount
Power2.5W
Quick Jump:
Technical Specifications
Infineon BSC019N04NSGATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 8.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 1.9mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 1.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC019N04NSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC019N04NSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
