Infineon
BSC020N03MSG
Power Field-Effect Transistor, 25A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Power2.5W
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Technical Specifications
Infineon BSC020N03MSG technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 9.6nF |
| Length | 5.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 27ns |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC020N03MSG Datasheet
Download the complete datasheet for Infineon BSC020N03MSG to view detailed technical specifications.
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