N-channel Power MOSFET featuring 30V drain-source voltage and 2mΩ maximum Rds(on). This silicon, metal-oxide semiconductor FET offers a continuous drain current of 100A and a maximum power dissipation of 96W. Designed for surface mounting with tin, matte contact plating, it operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and includes a gate-to-source voltage rating of 16V.
MountingSurface Mount
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Technical Specifications
Infineon BSC020N03MSGATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 9.6nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 96W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC020N03MSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC020N03MSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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