This device is a 40 V N-channel power MOSFET in Infineon's OptiMOS 6 family. It is offered in a TDSON-8 FL package and specifies a maximum drain-source on-state resistance of 2.2 mΩ at 10 V gate drive and 3.2 mΩ at 4.5 V gate drive. The MOSFET supports up to 139 A continuous drain current at 25 °C case temperature, 556 A pulsed drain current, and operation from -55 °C to 175 °C. It also features low charge and capacitance characteristics, including 28 nC total gate charge at 0 V to 10 V and 31 nC output charge, and is described as RoHS compliant and halogen-free.
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Infineon BSC022N04LS6 technical specifications.
| Transistor Type | N-channel MOSFET |
| Drain-Source Voltage | 40V |
| Continuous Drain Current | 139A |
| Pulsed Drain Current | 556A |
| On-Resistance RDS(on) max @ VGS=10V | 2.2mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | 3.2mΩ |
| Output Charge Qoss | 31nC |
| Total Gate Charge Qg @ 0V..10V | 28nC |
| Total Gate Charge Qg @ 0V..4.5V | 13.5nC |
| Gate Threshold Voltage Min | 1.3V |
| Gate Threshold Voltage Max | 2.3V |
| Input Capacitance Ciss | 1900pF |
| Output Capacitance Coss | 630pF |
| Reverse Transfer Capacitance Crss | 20pF |
| Gate to Source Charge Qgs | 5.5nC |
| Gate to Drain Charge Qgd | 3.6nC |
| Operating Junction Temperature Max | 175°C |
| Thermal Resistance Junction-to-Case Bottom | 1.9°C/W |
| Package Type | TDSON-8 FL |
| Reverse Recovery Charge Qrr | 42nC |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
