N-channel power MOSFET featuring 40V drain-source voltage and 2.2mΩ maximum on-state resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 100A and a maximum power dissipation of 69W. Designed for surface mounting with tin contact plating, it operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and packaged on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power69W
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Technical Specifications
Infineon BSC022N04LSATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.6nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| On-State Resistance | 2.2mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 69W |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC022N04LSATMA1 Datasheet
Download the complete datasheet for Infineon BSC022N04LSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.