N-channel power MOSFET featuring 40V drain-source voltage and 2.2mΩ maximum on-state resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 100A and a maximum power dissipation of 69W. Designed for surface mounting with tin contact plating, it operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and packaged on tape and reel.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSC022N04LSATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSC022N04LSATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.2mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.6nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| On-State Resistance | 2.2mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 69W |
| Rds On Max | 2.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC022N04LSATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
