Infineon
BSC025N03MSGXT
Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MountingSurface Mount
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Technical Specifications
Infineon BSC025N03MSGXT technical specifications.
General
Contact Plating
Tin, Matte
Continuous Drain Current (ID)
23A
Fall Time
11ns
Gate to Source Voltage (Vgs)
16V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Packaging
Cut Tape
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
29ns
Turn-On Delay Time
22ns
Compliance
RoHS
Compliant
Datasheet
Infineon BSC025N03MSGXT Datasheet
Download the complete datasheet for Infineon BSC025N03MSGXT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.