N-channel MOSFET, 40V drain-source voltage, 23A continuous drain current, and 2.6mΩ maximum on-state resistance. Features include 150°C maximum operating temperature, 63W power dissipation, and surface mount packaging in tape and reel. Halogen-free and RoHS compliant with tin contact plating.
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Infineon BSC026N04LSATMA1 technical specifications.
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| On-State Resistance | 2.6mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 63W |
| Rds On Max | 2.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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