N-Channel Power MOSFET featuring a low on-resistance of 0.004 ohms and a continuous drain current capability of 24A. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor operates at a drain-source voltage of 25V. Designed with 5 terminals in a DUAL terminal position, it is housed in an SOP-8 package.
Quick Jump:
Technical Specifications
Infineon BSC026NE2LS5ATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC026NE2LS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSC026NE2LS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.