N-Channel Power MOSFET featuring 40V drain-source voltage and 2.7mΩ Rds On resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of 100A and a maximum power dissipation of 83W. Designed for efficient switching, it exhibits a fall time of 6.2ns and turn-on delay of 9.8ns. The component operates within a temperature range of -55°C to 150°C and is packaged in a TDSON-8 plastic housing, tape and reel.
Power2.5W
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Technical Specifications
Infineon BSC027N04LSG technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 6.8nF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 9.8ns |
| Width | 5.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC027N04LSG Datasheet
Download the complete datasheet for Infineon BSC027N04LSG to view detailed technical specifications.
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