N-channel MOSFET, 40V drain-source voltage, 24A continuous drain current, and 2.7mΩ maximum on-state resistance. Features include a 2.3mΩ drain-to-source resistance, 6.8nF input capacitance, and 2V threshold voltage. This silicon, metal-oxide semiconductor FET operates within a -55°C to 150°C temperature range and offers 83W maximum power dissipation. Designed for surface mounting, it is packaged in tape and reel and is RoHS compliant.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC027N04LSGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Resistance | 2.3mR |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 2.7mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC027N04LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC027N04LSGATMA1 to view detailed technical specifications.
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