N-Channel Power MOSFET, 60V drain-source voltage, 23A continuous drain current, and a low on-resistance of 0.0027 ohms. This single-element silicon Metal-oxide Semiconductor FET features a SUPERSO8 package with 5 terminals and dual terminal positioning. Operating temperature range extends from -55°C.
Sign in to ask questions about the Infineon BSC027N06LS5ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon BSC027N06LS5ATMA1 technical specifications.
| Number of Terminals | 5 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon BSC027N06LS5ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
