N-Channel Power MOSFET, 60V drain-source voltage, 23A continuous drain current, and a low on-resistance of 0.0027 ohms. This single-element silicon Metal-oxide Semiconductor FET features a SUPERSO8 package with 5 terminals and dual terminal positioning. Operating temperature range extends from -55°C.
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Technical Specifications
Infineon BSC027N06LS5ATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon BSC027N06LS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSC027N06LS5ATMA1 to view detailed technical specifications.
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