N-channel silicon MOSFET with 60V drain-source voltage and 23A continuous drain current. Features low on-resistance of 2.8mΩ at 10A, 139W maximum power dissipation, and 13nF input capacitance. Designed for surface mounting with tin contact plating, this halogen-free component operates from -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSC028N06LS3GATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 13nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 2.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC028N06LS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC028N06LS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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