N-channel silicon MOSFET featuring a low on-resistance of 0.0028 ohms and a continuous drain current capability of 23A at 60V. This single-element power transistor is constructed with a metal-oxide semiconductor field-effect transistor technology. It is housed in a GREEN, PLASTIC SUPERSO8 package with 5 terminals arranged in a DUAL configuration.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSC028N06NSTATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon BSC028N06NSTATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
