N-channel silicon MOSFET featuring a low on-resistance of 0.0028 ohms and a continuous drain current capability of 23A at 60V. This single-element power transistor is constructed with a metal-oxide semiconductor field-effect transistor technology. It is housed in a GREEN, PLASTIC SUPERSO8 package with 5 terminals arranged in a DUAL configuration.
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Technical Specifications
Infineon BSC028N06NSTATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon BSC028N06NSTATMA1 Datasheet
Download the complete datasheet for Infineon BSC028N06NSTATMA1 to view detailed technical specifications.
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