N-channel power MOSFET featuring 80V drain-source voltage and a low on-resistance of 0.003 ohms. This single-element silicon Metal-oxide Semiconductor FET offers a continuous drain current of 22A. Designed with 5 terminals in a dual configuration, it is housed in an SOP-8 package.
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Infineon BSC030N08NS5ATMA1 technical specifications.
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon BSC030N08NS5ATMA1 to view detailed technical specifications.
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