N-channel silicon MOSFET, 60V drain-source voltage, 3.4mΩ Rds(on) at 100A continuous drain current. Features a maximum power dissipation of 74W, operating temperature range of -55°C to 150°C, and 3nF input capacitance. This surface-mount device is supplied in tape and reel packaging and is RoHS compliant.
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Infineon BSC034N06NSATMA1 technical specifications.
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 3.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
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