N-Channel Power MOSFET featuring 40V drain-source voltage and 21A continuous drain current. Offers low on-state resistance of 3.5mΩ (Rds On Max) and 2.9mR. Designed for surface mount applications with a TDSON-8 plastic package, operating from -55°C to 150°C. Includes fast switching characteristics with a fall time of 5ns and turn-on delay of 7.9ns. RoHS compliant and halogen-free.
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BSC035N04LSGATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| On-State Resistance | 3.5mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 3.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7.9ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC035N04LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC035N04LSGATMA1 to view detailed technical specifications.
No datasheet is available for this part.