N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a low on-resistance of 0.0035 ohms and a drain-source voltage rating of 100V. Capable of handling a continuous drain current of 100A. This single-element device is housed in a TDSON-8 package with 5 terminals arranged in a dual configuration.
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Technical Specifications
Infineon BSC035N10NS5ATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC035N10NS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSC035N10NS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.