N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a low on-resistance of 0.0035 ohms and a drain-source voltage rating of 100V. Capable of handling a continuous drain current of 100A. This single-element device is housed in a TDSON-8 package with 5 terminals arranged in a dual configuration.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon BSC035N10NS5ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Infineon BSC035N10NS5ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
