N-Channel Power MOSFET, 100V drain-source voltage, 18A continuous drain current, and a low on-resistance of 0.004 ohms. This single-element silicon Metal-oxide Semiconductor Field-Effect Transistor features a 5-terminal SOP-8 package with dual terminal positions.
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Technical Specifications
Infineon BSC040N10NS5ATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC040N10NS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSC040N10NS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.