Power Field-Effect Transistor, 17A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Infineon BSC042N03MSGATMA1 technical specifications.
| Continuous Drain Current (ID) | 93A |
| Drain to Source Voltage (Vdss) | 30V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.3nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 4.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
No datasheet is available for this part.
