Infineon
BSC042N03SG
Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Current Rating95A
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
Infineon BSC042N03SG technical specifications.
General
| Continuous Drain Current (ID) | 95A |
| Current Rating | 95A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.66nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Rds On Max | 4.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 27ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC042N03SG Datasheet
Download the complete datasheet for Infineon BSC042N03SG to view detailed technical specifications.
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