Infineon
BSC047N08NS3G
Power Field-Effect Transistor, 18A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
PackageTO-263-3
Power2.5W
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Technical Specifications
Infineon BSC047N08NS3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.8V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC047N08NS3G Datasheet
Download the complete datasheet for Infineon BSC047N08NS3G to view detailed technical specifications.
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