N-Channel Power MOSFET, 80V Vdss, 18A continuous drain current, and 4.7mΩ Rds On. Features 125W max power dissipation, 150°C max operating temperature, and 3.9mΩ drain-to-source resistance. This silicon, metal-oxide semiconductor FET offers 11ns fall time and 18ns turn-on delay. Packaged in tape and reel, it is RoHS compliant and designed for surface mounting.
MountingSurface Mount
Power2.5W
Quick Jump:
Technical Specifications
Infineon BSC047N08NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 4.7mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 4.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC047N08NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC047N08NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.