N-channel silicon MOSFET featuring a continuous drain current of 35A and a drain-source voltage of 30V. This power field-effect transistor offers a low on-resistance of 0.0017 ohms. It is a single-element device with a dual terminal position, packaged in an SOP-8 configuration.
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Technical Specifications
Infineon BSC0500NSIATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC0500NSIATMA1 Datasheet
Download the complete datasheet for Infineon BSC0500NSIATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.