N-Channel Power MOSFET featuring 30V drain-source voltage and 29A continuous drain current. This single-element, silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.0024 ohms. Designed with 5 terminals in a DUAL position, this device is ideal for power switching applications.
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Technical Specifications
Infineon BSC0501NSIATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC0501NSIATMA1 Datasheet
Download the complete datasheet for Infineon BSC0501NSIATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.