N-channel silicon MOSFET with a continuous drain current of 21A and a drain-source voltage of 30V. Features a low on-resistance of 0.0047 ohms. This single-element, metal-oxide semiconductor field-effect transistor is housed in an SOP-8 package with 5 terminals.
Quick Jump:
Technical Specifications
Infineon BSC0504NSIATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC0504NSIATMA1 Datasheet
Download the complete datasheet for Infineon BSC0504NSIATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.