N-Channel Power MOSFET, 30V Vdss, 80A continuous drain current, and 4.2mR drain-to-source resistance. Features 5mR Rds On, 2.2V threshold voltage, and 2.8nF input capacitance. Designed for surface mount applications with a TDSON-8 plastic package. Operates from -55°C to 150°C with 50W max power dissipation. RoHS compliant.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC050N03LSGATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Resistance | 4.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 5mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 2.2V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC050N03LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC050N03LSGATMA1 to view detailed technical specifications.
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