N-channel silicon MOSFET featuring 40V drain-source voltage and 85A continuous drain current. Offers a low 5mΩ Rds(on) for efficient power switching. Designed for surface mount applications with a TDSON-8 package, this component boasts fast switching speeds with a 4.2ns fall time. Maximum power dissipation is 57W, operating from -55°C to 150°C.
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon BSC050N04LSGATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 85A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 4.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 6.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC050N04LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC050N04LSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
