N-channel Power MOSFET featuring 25V drain-source breakdown voltage and 58A continuous drain current. Offers low 7.6mΩ drain-source resistance at VGS=10V. Designed for efficient switching with a typical turn-on delay of 2.5ns and fall time of 2ns. Packaged in a compact TDSON-8 (TO-252-3) surface-mount plastic package, this component is halogen-free, lead-free, RoHS, and REACH SVHC compliant, operating from -55°C to 150°C with a maximum power dissipation of 28W.
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Infineon BSC050NE2LS technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5mR |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 240pF |
| Lead Free | Lead Free |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Rds On Max | 3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 11.4ns |
| Turn-On Delay Time | 2.5ns |
| Width | 5.35mm |
| RoHS | Compliant |
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