N-channel silicon MOSFET featuring 80V drain-source voltage and 19A continuous drain current. Offers a low on-resistance of 0.0052 ohms for efficient power switching. This single-element device is housed in a 5-terminal SOP-8 package.
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Technical Specifications
Infineon BSC052N08NS5ATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC052N08NS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSC052N08NS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.