N-Channel Power MOSFET featuring 40V Drain-to-Source Voltage (Vdss) and a low 5.4mΩ Rds On. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 81A and a maximum power dissipation of 57W. Designed for surface mounting with tin, matte contact plating, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSC054N04NSGATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 81A |
| Drain to Source Voltage (Vdss) | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.8nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 5.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC054N04NSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC054N04NSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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