Infineon
BSC057N03LSGATMA1
Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC057N03LSGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 4.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 5.7mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 5.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC057N03LSGATMA1 Datasheet
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