N-Channel Power MOSFET, 80V Vds, 5.7mR Rds On, 16A continuous drain current. Features 114W power dissipation, 3.9nF input capacitance, and a maximum operating temperature of 150°C. Surface mount TDSON-8 package with tin, matte contact plating. RoHS compliant and halogen-free.
MountingSurface Mount
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Technical Specifications
Infineon BSC057N08NS3GATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 4.7mR |
| Drain to Source Voltage (Vdss) | 80V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 80V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Mount | Surface Mount |
| On-State Resistance | 5.7mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC057N08NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC057N08NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.