N-channel silicon MOSFET for power applications, featuring a low Rds(on) of 5.9mΩ at a Vgs of 10V and a continuous drain current capability of 73A. This device offers a drain-source voltage rating of 40V and a maximum power dissipation of 50W. Designed for surface mounting in a TDSON-8 package, it operates across a wide temperature range from -55°C to 150°C. Key switching parameters include a fall time of 3.8ns, turn-on delay of 5.6ns, and turn-off delay of 23ns, with an input capacitance of 3.2nF. This component is RoHS compliant and halogen-free.
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Infineon BSC059N04LSGATMA1 technical specifications.
| Continuous Drain Current (ID) | 73A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.2nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 5.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 5.6ns |
| RoHS | Compliant |
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