N-Channel Power MOSFET, featuring 60V drain-source voltage and 6.6mΩ on-state resistance. This silicon Metal-oxide Semiconductor FET offers a continuous drain current of 64A and a maximum power dissipation of 46W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. The component is packaged in a TDSON-8 plastic package on tape and reel.
MountingSurface Mount
Power46W
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Technical Specifications
Infineon BSC066N06NSATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 64A |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 46W |
| Mount | Surface Mount |
| On-State Resistance | 6.6mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 46W |
| Rds On Max | 6.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC066N06NSATMA1 Datasheet
Download the complete datasheet for Infineon BSC066N06NSATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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