N-channel power MOSFET featuring 100V drain-source voltage and a low on-resistance of 0.007 ohms. This single-element silicon Metal-oxide Semiconductor FET offers a continuous drain current of 14A. Designed with 5 terminals in a dual position configuration, it is suitable for various power switching applications.
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Technical Specifications
Infineon BSC070N10NS5ATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon BSC070N10NS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSC070N10NS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.