N-Channel Power MOSFET featuring 80V drain-source voltage and a low on-resistance of 0.0072 ohms at 19A continuous drain current. This single-element silicon device utilizes Metal-oxide Semiconductor Field-Effect Transistor technology. Packaged in an SOP-8, it offers 5 terminals with a dual terminal position.
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Technical Specifications
Infineon BSC072N08NS5ATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC072N08NS5ATMA1 Datasheet
Download the complete datasheet for Infineon BSC072N08NS5ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.