N-channel silicon MOSFET featuring 60V drain-source voltage and 7.6mΩ Rds(on) at 10V gate-source voltage. This power field-effect transistor offers a continuous drain current of 50A and a maximum power dissipation of 69W. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. The component includes a 4nF input capacitance and is packaged in TDSON-8.
MountingSurface Mount
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Technical Specifications
Infineon BSC076N06NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Voltage (Vdss) | 60V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 7.6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC076N06NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC076N06NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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