N-Channel Power MOSFET, 120V Vds, 7.7mΩ Rds On, and 98A continuous drain current. This silicon, metal-oxide semiconductor FET features a maximum power dissipation of 139W and an operating temperature range of -55°C to 150°C. Designed for surface mounting, it offers low on-resistance and is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSC077N12NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 98A |
| Drain to Source Voltage (Vdss) | 120V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.7nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 120V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 7.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC077N12NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC077N12NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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