Power Field-Effect Transistor, 14A I(D), 30V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Infineon BSC079N03LSCGATMA1 technical specifications.
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 7.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 3ns |
| RoHS | Compliant |
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