The BSC079N10NSGATMA1 is a 100V N-Channel MOSFET from Infineon with a maximum continuous drain current of 100A and a maximum gate to source voltage of 20V. It has a maximum power dissipation of 156W and is packaged in a TDSON-8. The device is RoHS compliant and has a maximum operating temperature of 150°C.
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Infineon BSC079N10NSGATMA1 technical specifications.
| Continuous Drain Current (ID) | 100A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 156W |
| Rds On Max | 7.9mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSC079N10NSGATMA1 to view detailed technical specifications.
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