Infineon
BSC079N10NSGXT
Power Field-Effect Transistor, 13.4A I(D), 100V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MountingSurface Mount
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Technical Specifications
Infineon BSC079N10NSGXT technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 13.4A |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC079N10NSGXT Datasheet
Download the complete datasheet for Infineon BSC079N10NSGXT to view detailed technical specifications.
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